krf excimer laser compex pro 102f Search Results


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Ceracomp Co Ltd pmn-pt single-crystal substrates cpsc160-95
( a ) XRD θ-2θ scan of <t>NNO/PMN-PT</t> (001) (black solid line) <t>and</t> <t>NNO/STO/PMN-PT</t> (001) (red solid line). Note that NNO/STO/PMN-PT (001) shows higher and sharper (002) NNO peak than NNO/PMN-PT (001). ( b ) Rocking curves taken around NNO (002) diffraction for samples with and without STO buffer layer. The full width at half maximum (FWHM) of rocking curve around NNO (002) reflection with STO buffer layers is much smaller than that without STO buffer layers. ( c ) XRD phi (ϕ) scans taken on the NNO (101) and PMN-PT (101) diffraction peaks, respectively. ( d ) The surface morphology of the bare PMN-PT (001) substrate and NNO/STO/PMN-PT (001). The surface topography of NNO/STO/PMN-PT (001) is not degraded from that of the bare PMN-PT (001) substrate after the growth.
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Image Search Results


( a ) XRD θ-2θ scan of NNO/PMN-PT (001) (black solid line) and NNO/STO/PMN-PT (001) (red solid line). Note that NNO/STO/PMN-PT (001) shows higher and sharper (002) NNO peak than NNO/PMN-PT (001). ( b ) Rocking curves taken around NNO (002) diffraction for samples with and without STO buffer layer. The full width at half maximum (FWHM) of rocking curve around NNO (002) reflection with STO buffer layers is much smaller than that without STO buffer layers. ( c ) XRD phi (ϕ) scans taken on the NNO (101) and PMN-PT (101) diffraction peaks, respectively. ( d ) The surface morphology of the bare PMN-PT (001) substrate and NNO/STO/PMN-PT (001). The surface topography of NNO/STO/PMN-PT (001) is not degraded from that of the bare PMN-PT (001) substrate after the growth.

Journal: Scientific Reports

Article Title: Modulation of metal-insulator transitions by field-controlled strain in NdNiO 3 /SrTiO 3 /PMN-PT (001) heterostructures

doi: 10.1038/srep22228

Figure Lengend Snippet: ( a ) XRD θ-2θ scan of NNO/PMN-PT (001) (black solid line) and NNO/STO/PMN-PT (001) (red solid line). Note that NNO/STO/PMN-PT (001) shows higher and sharper (002) NNO peak than NNO/PMN-PT (001). ( b ) Rocking curves taken around NNO (002) diffraction for samples with and without STO buffer layer. The full width at half maximum (FWHM) of rocking curve around NNO (002) reflection with STO buffer layers is much smaller than that without STO buffer layers. ( c ) XRD phi (ϕ) scans taken on the NNO (101) and PMN-PT (101) diffraction peaks, respectively. ( d ) The surface morphology of the bare PMN-PT (001) substrate and NNO/STO/PMN-PT (001). The surface topography of NNO/STO/PMN-PT (001) is not degraded from that of the bare PMN-PT (001) substrate after the growth.

Article Snippet: Epitaxial NdNiO 3 (NNO) thin films and SrTiO 3 (STO) buffer layers were grown on one-side-polished (001)-oriented PMN-PT single-crystal substrates (CPSC160-95, 0.2 mm thickness, Ceracomp, South Korea) without breaking the vacuum using pulsed laser deposition with a KrF excimer laser fluence of ~1.5 J/cm 2 (wavelength 248 nm; Coherent, Compex Pro 102 F).

Techniques:

( a ) Schematics of four-point-probe resistivity measurement using voltage-induced strain of NNO/STO/PMN-PT (001) heterostructure. ( b ) Temperature dependence of the in-plane resistivity for the NNO thin films without out-of-plane electric field (black solid line) and with out-of-plane electric field of +10 kV/cm (red solid line). The insets shows the magnified plot of temperature dependence of resistivity and the first derivative of resistivity with respect to temperature (dR/dT) plot as a function of temperature between 120 K and 180 K.

Journal: Scientific Reports

Article Title: Modulation of metal-insulator transitions by field-controlled strain in NdNiO 3 /SrTiO 3 /PMN-PT (001) heterostructures

doi: 10.1038/srep22228

Figure Lengend Snippet: ( a ) Schematics of four-point-probe resistivity measurement using voltage-induced strain of NNO/STO/PMN-PT (001) heterostructure. ( b ) Temperature dependence of the in-plane resistivity for the NNO thin films without out-of-plane electric field (black solid line) and with out-of-plane electric field of +10 kV/cm (red solid line). The insets shows the magnified plot of temperature dependence of resistivity and the first derivative of resistivity with respect to temperature (dR/dT) plot as a function of temperature between 120 K and 180 K.

Article Snippet: Epitaxial NdNiO 3 (NNO) thin films and SrTiO 3 (STO) buffer layers were grown on one-side-polished (001)-oriented PMN-PT single-crystal substrates (CPSC160-95, 0.2 mm thickness, Ceracomp, South Korea) without breaking the vacuum using pulsed laser deposition with a KrF excimer laser fluence of ~1.5 J/cm 2 (wavelength 248 nm; Coherent, Compex Pro 102 F).

Techniques:

in-situ XRD reciprocal space mapping (RSM) around the ( 03) Bragg reflections of NNO/STO/PMN-PT heterostructure before ( a ) and after ( b ) the application of in-situ electric field of +10 kV/cm along [001] direction at room temperature (300 K). The insets presents the magnified RSM around ( 03) NNO reflection.

Journal: Scientific Reports

Article Title: Modulation of metal-insulator transitions by field-controlled strain in NdNiO 3 /SrTiO 3 /PMN-PT (001) heterostructures

doi: 10.1038/srep22228

Figure Lengend Snippet: in-situ XRD reciprocal space mapping (RSM) around the ( 03) Bragg reflections of NNO/STO/PMN-PT heterostructure before ( a ) and after ( b ) the application of in-situ electric field of +10 kV/cm along [001] direction at room temperature (300 K). The insets presents the magnified RSM around ( 03) NNO reflection.

Article Snippet: Epitaxial NdNiO 3 (NNO) thin films and SrTiO 3 (STO) buffer layers were grown on one-side-polished (001)-oriented PMN-PT single-crystal substrates (CPSC160-95, 0.2 mm thickness, Ceracomp, South Korea) without breaking the vacuum using pulsed laser deposition with a KrF excimer laser fluence of ~1.5 J/cm 2 (wavelength 248 nm; Coherent, Compex Pro 102 F).

Techniques: In Situ

Data for T MI as a function of substrate-controlled in-plane strain ( ) were chosen from ref. (blue) and ref. (orange). Two red asterisks indicate the T MI modulation as a function of field-controlled in-plane strain ( ) in our NNO thin films grown on STO/PMN-PT (001) substrate.

Journal: Scientific Reports

Article Title: Modulation of metal-insulator transitions by field-controlled strain in NdNiO 3 /SrTiO 3 /PMN-PT (001) heterostructures

doi: 10.1038/srep22228

Figure Lengend Snippet: Data for T MI as a function of substrate-controlled in-plane strain ( ) were chosen from ref. (blue) and ref. (orange). Two red asterisks indicate the T MI modulation as a function of field-controlled in-plane strain ( ) in our NNO thin films grown on STO/PMN-PT (001) substrate.

Article Snippet: Epitaxial NdNiO 3 (NNO) thin films and SrTiO 3 (STO) buffer layers were grown on one-side-polished (001)-oriented PMN-PT single-crystal substrates (CPSC160-95, 0.2 mm thickness, Ceracomp, South Korea) without breaking the vacuum using pulsed laser deposition with a KrF excimer laser fluence of ~1.5 J/cm 2 (wavelength 248 nm; Coherent, Compex Pro 102 F).

Techniques: